Production of a semiconductor support based on group III nitrides
US10522346B2 · kind B2 · utility
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1References
28Claims
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Assignee
Inventors
Key dates
| Filing date | Jan 21, 2016 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Jan 21, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for producing a support for the production of a semiconductor structure based on group III nitrides, characterised in that the method comprises the steps of: The invention also relates to a support obtained by the method, to a semiconductor structure based on the support, and to the method for the production thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.