Fully self-aligned via

US10522404B2 · kind B2 · utility

Assignee

• Micromaterials LLC · US

Inventors

• Ying Zhang · Santa Clara, US
• Abhijit Basu Mallick · Palo Alto, US
• Regina Freed · Los Altos, US
• Nitin K. Ingle · San Jose, US
• Uday Mitra · Cupertino, US
• Ho-yung David Hwang · Hsinchu, TW

Key dates

• Filing date: Jul 24, 2019
• Grant date: Dec 31, 2019
• Expiry date: Jul 24, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53266
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A first metallization layer comprising a set of first conductive lines that extend along a first direction on a first insulating layer on a substrate. A second insulating layer is on the first insulating layer. A second metallization layer comprises a set of second conductive lines on a third insulating layer and on the second insulating layer above the first metallization layer. The set of second conductive lines extend along a second direction that crosses the first direction at an angle. A via between the first metallization layer and the second metallization layer. The via is self-aligned along the second direction to one of the first conductive lines.