Semiconductor device and method for manufacturing the same
US10522418B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2018 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Apr 23, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device is provided. A semiconductor substrate is received. The semiconductor substrate is patterned to form a plurality of protrusions spaced from one another, wherein the protrusion comprises a base section, and a seed section stacked on the base section. A plurality of first insulative structures are formed, covering sidewalls of the base sections and exposing sidewalls of the seed sections. A plurality of spacers are formed, covering the sidewalls of the seed sections. The first insulative structures are partially removed to partially expose the sidewalls of the base sections. The base sections exposed from the first insulative structures are removed. A plurality of second insulative structures are formed under the seed sections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.