You-Ru Lin
30Patents
5h-index
31Co-inventors
65Inventor score
Filing activity: Aug 30, 2011 → Nov 20, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8841701B2 | FinFET device having a channel defined in a diamond-like shape semiconductor structure | Electricity | 499 | Active |
| US8815712B2 | Method for epitaxial re-growth of semiconductor region | Electricity | 442 | Active |
| US8742509B2 | Apparatus and method for FinFETs | Electricity | 182 | Active |
| US8994002B2 | FinFET having superlattice stressor | Electricity | 13 | Active |
| US9502539B2 | FINFET device having a channel defined in a diamond-like shape semiconductor structure | Electricity | 6 | Active |
| US10084069B2 | Apparatus and method for FinFETs | Electricity | 4 | Active |
| US9583598B2 | FETs and methods of forming FETs | Electricity | 4 | Active |
| US9559099B2 | Apparatus and method for FinFETs | Electricity | 3 | Active |
| US9773889B2 | Method of semiconductor arrangement formation | Electricity | 3 | Active |
| US11456330B2 | Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric device | Electricity | 2 | Active |
| US9153582B2 | Apparatus and method for FinFETs | Electricity | 2 | Active |
| US10797162B2 | FinFET device having a channel defined in a diamond-like shape semiconductor structure | Electricity | 1 | Active |
| US10263097B2 | Method of semiconductor arrangement formation | Electricity | 1 | Active |
| US9450098B2 | FinFET having superlattice stressor | Electricity | 1 | Active |
| US11856862B2 | Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric device | Electricity | 1 | Active |
| US11984261B2 | Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal device | Electricity | 0 | Active |
| US12232424B2 | Fatigue-free bipolar loop treatment to reduce imprint effect in piezoelectric device | Electricity | 0 | Active |
| US9922828B2 | Apparatus and method for FinFETs | Electricity | 0 | Active |
| US12082505B2 | Integrated heater (and related method) to recover degraded piezoelectric device performance | Electricity | 0 | Active |
| US11502186B2 | FinFET device having a channel defined in a diamond-like shape semiconductor structure | Electricity | 0 | Active |
| US10134638B2 | FETS and methods of forming FETS | Electricity | 0 | Active |
| US10522418B2 | Semiconductor device and method for manufacturing the same | Electricity | 0 | Active |
| US11177368B2 | Semiconductor arrangement | Electricity | 0 | Active |
| US11730058B2 | Integrated heater (and related method) to recover degraded piezoelectric device performance | Electricity | 0 | Active |
| US11289568B2 | Reduction of electric field enhanced moisture penetration by metal shielding | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.