Semiconductor structure

US10522463B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Cheng Zhang · Ann Arbor, US
• Qi He · Zhuqiao, CN
• Yan Wang · Shanghai, CN

Key dates

• Filing date: May 24, 2019
• Grant date: Dec 31, 2019
• Expiry date: May 24, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/5226
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor structure is provided and includes a base substrate including a device region and a peripheral region surrounding the device region, the base substrate including a base interconnection structure formed in each of the device region and the peripheral region; a medium layer on the base substrate; a first interconnection structure through the medium layer and on the base interconnection structure in the device region; and a second interconnection structure through the medium layer and on the base interconnection structure in the peripheral region. The first interconnection structure includes: a first portion over the base interconnection structure, and a second portion partially on the first portion and partially on a portion of the medium layer.