Semiconductor device
US10522465B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 2, 2018 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Oct 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include: a semiconductor substrate; an interlayer insulating film; a contact plug penetrating the interlayer insulating film; a first metal layer covering a surface of the interlayer insulating film; a protective insulating film covering a part of of the first metal layer; and a second metal layer covering the surface of the first metal layer. A peripheral region may be a region in which the protective insulating film is located; an active region may be a region in which a plurality of first parts of the contact plug is located; and an intermediate region may be a region which is located between the peripheral region and the active region and in which a second part of the contact plug is located. The first parts may extend toward an edge portion of the protective insulating film, and the second part may extend along the edge portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.