Jun Okawara
12Patents
2h-index
13Co-inventors
43Inventor score
Filing activity: Apr 2, 2013 → Mar 10, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9159721B2 | Semiconductor device comprising an diode region and an IGBT region | Electricity | 8 | Active |
| US9685512B2 | Semiconductor device | Electricity | 2 | Active |
| US9276137B2 | Diode and semiconductor device including built-in diode | Electricity | 2 | Active |
| US9318590B2 | IGBT using trench gate electrode | Electricity | 1 | Active |
| US9620632B2 | Semiconductor device and method of manufacturing the semiconductor device | Electricity | 1 | Active |
| US9691888B1 | IGBT | Electricity | 1 | Active |
| US9437700B2 | Semiconductor device | Electricity | 1 | Active |
| US11004815B2 | Semiconductor device | Electricity | 0 | Active |
| US11476355B2 | Semiconductor device | Electricity | 0 | Active |
| US9966372B2 | Semiconductor device and method of manufacturing semiconductor device having parallel contact holes between adjacent trenches | Electricity | 0 | Active |
| US10522465B2 | Semiconductor device | Electricity | 0 | Active |
| US10700054B2 | Semiconductor apparatus | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.