Image sensor and an image processing device including the same
US10522581B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2017 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Mar 27, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K39/32
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor includes a semiconductor substrate providing a plurality of pixel regions, a semiconductor photoelectric device disposed in each of the plurality of pixel regions, an organic photoelectric device disposed above the semiconductor photoelectric device, and a pixel circuit disposed below the semiconductor photoelectric device. The pixel circuit includes a plurality of driving transistors configured to generate a pixel voltage signal from an electric charge generated in the semiconductor photoelectric device and the organic photoelectric device. A driving gate electrode of at least one of the plurality of driving transistors has a region embedded in the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.