Phase-change memory cell
US10522593B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2018 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Aug 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Two phase-change memory cells are formed from a first conductive via, a second conductive and a central conductive via positioned between the first and second conductive vias where a layer of phase-change material is electrically connected to the first and second conductive vias by corresponding resistive elements and insulated from the central conductive via by an insulating layer. The conductive vias each include a lower portion made of a first metal (such as tungsten) and an upper portion made of a second metal (such as copper). Drains of two transistors are coupled to the first and second conductive vias while sources of those two transistors are coupled to the central conductive via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.