Inventor · Meylan, FR

Laurent Favennec

13Patents

3h-index

22Co-inventors

56Inventor score

Filing activity: Dec 3, 2007 → Apr 3, 2023

Most-cited inventions

Patent	Title	Area	Cited by	Status
US9711550B2	Pinned photodiode with a low dark current	Emerging Cross-Sectional Technologies	7	Active
US7923820B2	Method of producing a porous dielectric element and corresponding dielectric element	Electricity	7	Active
US8765575B2	Shallow trench forming method	Electricity	3	Active
US11653582B2	Chip containing an onboard non-volatile memory comprising a phase-change material	Physics	2	Active
US8796148B2	Method for producing a deep trench in a microelectronic component substrate	Electricity	2	Active
US9087872B2	Method for forming an insulating trench in a semiconductor substrate and structure, especially CMOS image sensor, obtained by said method	Electricity	1	Active
US9117876B2	Integrated circuit comprising an isolating trench and corresponding method	Electricity	0	Active
US10522593B2	Phase-change memory cell	Electricity	0	Active
US12295272B2	Phase change memory	Electricity	0	Active
US8829622B2	Integrated circuit comprising an isolating trench and corresponding method	Electricity	0	Active
US12232435B2	Chip containing an onboard non-volatile memory comprising a phase-change material	Physics	0	Active
US12336440B2	Phase change memory	Electricity	0	Active
US7732348B2	Method of producing a porous dielectric element and corresponding dielectric element	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.