Silicon-on-insulator backside contacts
US10522626B2 · kind B2 · utility
1Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 31, 2018 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | May 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In certain aspects, an apparatus comprises an SOI MOSFET having a diffusion region as a source or a drain on a back insulating layer, wherein the diffusion region has a front diffusion side and a back diffusion side opposite to the front diffusion side; a silicide layer on the front diffusion side having a back silicide side facing the diffusion region and a front silicide side opposite to the back silicide side; and a backside contact connected to the silicide layer, wherein at least a portion of the backside contact is in the back insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.