George Imthurn
30Patents
6h-index
22Co-inventors
69Inventor score
Filing activity: Sep 7, 1989 → Jul 12, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5441591A | Silicon to sapphire bond | Emerging Cross-Sectional Technologies | 81 | Expired |
| US4932747A | Fiber bundle homogenizer and method utilizing same | Physics | 68 | Expired |
| US9466536B2 | Semiconductor-on-insulator integrated circuit with back side gate | Electricity | 22 | Active |
| US5330918A | Method of forming a high voltage silicon-on-sapphire photocell array | Emerging Cross-Sectional Technologies | 20 | Expired |
| US6703647B1 | Triple base bipolar phototransistor | Electricity | 12 | Expired |
| US11081559B1 | Backside contact of a semiconductor device | Electricity | 9 | Active |
| US9559199B2 | LDMOS with adaptively biased gate-shield | Electricity | 5 | Active |
| US6372592B1 | Self-aligned MOSFET with electrically active mask | Electricity | 4 | Expired |
| USH1423H | Method for fabricating a silicon-on-insulator voltage multiplier | General | 3 | Active |
| US10637411B2 | Transistor layout for improved harmonic performance | Electricity | 2 | Active |
| US10192983B2 | LDMOS with adaptively biased gate-shield | Electricity | 2 | Active |
| US11171215B2 | Threshold voltage adjustment using adaptively biased shield plate | Electricity | 2 | Active |
| US11742396B2 | Threshold voltage adjustment using adaptively biased shield plate | Electricity | 1 | Active |
| US10522626B2 | Silicon-on-insulator backside contacts | Electricity | 1 | Active |
| US10636905B2 | LDMOS with adaptively biased gate-shield | Electricity | 1 | Active |
| US9553013B2 | Semiconductor structure with TRL and handle wafer cavities | Electricity | 1 | Active |
| US11011615B2 | Transistor with contacted deep well region | Electricity | 1 | Active |
| US10559520B2 | Bulk layer transfer processing with backside silicidation | Electricity | 0 | Active |
| US9780189B2 | Transistor with contacted deep well region | Electricity | 0 | Active |
| US10418465B1 | Non-volatile memory structure in silicon-on-insulator (SOI) technology | Electricity | 0 | Active |
| US11081582B2 | High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technology | Electricity | 0 | Active |
| US12100740B2 | Threshold voltage adjustment using adaptively biased shield plate | Electricity | 0 | Active |
| US10903357B2 | Laterally diffused metal oxide semiconductor (LDMOS) transistor on a semiconductor on insulator (SOI) layer with a backside device | Electricity | 0 | Active |
| US11683065B2 | Series shunt biasing method to reduce parasitic loss in a radio frequency switch | Electricity | 0 | Active |
| US11277677B1 | Optically powered switch and method for operating an optically powered switch | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.