Strained AlGaInP layers for efficient electron and hole blocking in light emitting devices

US10522717B2 · kind B2 · utility

Assignee

• LUMILEDS LLC · US

Inventors

• Lekhnath Bhusal · Golden, US
• Theodore Chung · Santa Clara, US
• Parijat Deb · San Jose, US

Key dates

• Filing date: Sep 25, 2018
• Grant date: Dec 31, 2019
• Expiry date: Sep 25, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/812

Abstract

A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer. The active layer may include a first barrier layer arranged to have a tensile strain, a second barrier layer arranged to have a tensile strain, and a first well layer disposed between the first barrier layer and the second barrier layer. The active layer may also include a first unstrained barrier layer, a second unstrained barrier layer, and a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.