Method and structure for single crystal acoustic resonator devices using thermal recrystallization
US10523180B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2018 |
| Grant date | Dec 31, 2019 |
| Priority date | — |
| Expiry date | Jul 13, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49005
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A method of manufacture and structure for an acoustic resonator device having a hybrid piezoelectric stack with a strained single crystal layer and a thermally-treated polycrystalline layer. The method can include forming a strained single crystal piezoelectric layer overlying the nucleation layer and having a strain condition and piezoelectric layer parameters, wherein the strain condition is modulated by nucleation growth parameters and piezoelectric layer parameters to improve one or more piezoelectric properties of the strained single crystal piezoelectric layer. Further, the method can include forming a polycrystalline piezoelectric layer overlying the strained single crystal piezoelectric layer, and performing a thermal treatment on the polycrystalline piezoelectric layer to form a recrystallized polycrystalline piezoelectric layer. The resulting device with this hybrid piezoelectric stack exhibits improved electromechanical coupling and wide bandwidth performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.