Craig Moe
22Patents
3h-index
19Co-inventors
52Inventor score
Filing activity: Aug 29, 2014 → Jan 23, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9321658B2 | Systems and methods for fluid treatment with homogeneous distribution of ultraviolet light | Chemistry; Metallurgy | 7 | Active |
| US9680057B2 | Ultraviolet light-emitting devices incorporating two-dimensional hole gases | Electricity | 3 | Active |
| US9745209B2 | Systems and methods for fluid treatment with homogeneous distribution of ultraviolet light | Chemistry; Metallurgy | 3 | Active |
| US9806227B2 | Ultraviolet light-emitting devices incorporating graded layers and compositional offsets | Electricity | 1 | Active |
| US10211368B2 | Ultraviolet light-emitting devices incorporating graded layers and compositional offsets | Electricity | 1 | Active |
| US11355664B2 | Aluminum nitride substrate removal for ultraviolet light-emitting devices | Electricity | 1 | Active |
| US10211369B2 | Ultraviolet light-emitting devices incorporating two-dimensional hole gases | Electricity | 1 | Active |
| US10700237B2 | Ultraviolet light-emitting devices incorporating graded layers and compositional offsets | Electricity | 0 | Active |
| US11856858B2 | Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin films | Electricity | 0 | Active |
| US11942569B2 | Methods and packages for enhancing reliability of ultraviolet light-emitting devices | Electricity | 0 | Active |
| US11618968B2 | Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafers | Electricity | 0 | Active |
| US10756234B2 | Aluminum nitride substrate removal for ultraviolet light-emitting devices | Electricity | 0 | Active |
| US11411168B2 | Methods of forming group III piezoelectric thin films via sputtering | Emerging Cross-Sectional Technologies | 0 | Active |
| US10370267B2 | Systems and methods for fluid treatment with homogeneous distribution of ultraviolet light | Chemistry; Metallurgy | 0 | Active |
| US11411169B2 | Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material | Emerging Cross-Sectional Technologies | 0 | Active |
| US11832521B2 | Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layers | Emerging Cross-Sectional Technologies | 0 | Active |
| US12102010B2 | Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devices | Electricity | 0 | Active |
| US11245382B2 | Method and structure for single crystal acoustic resonator devices using thermal recrystallization | Emerging Cross-Sectional Technologies | 0 | Active |
| US11895920B2 | Methods of forming group III piezoelectric thin films via removal of portions of first sputtered material | Emerging Cross-Sectional Technologies | 0 | Active |
| US12289087B2 | RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer | Emerging Cross-Sectional Technologies | 0 | Active |
| US11581866B2 | RF acoustic wave resonators integrated with high electron mobility transistors including a shared piezoelectric/buffer layer and methods of forming the same | Emerging Cross-Sectional Technologies | 0 | Active |
| US10523180B2 | Method and structure for single crystal acoustic resonator devices using thermal recrystallization | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.