Preparing conditioning disk for chemical mechanical polishing and chemical mechanical polishing method including the same
US10525566B2 · kind B2 · utility
2Cited by
6References
17Claims
0Family size
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Key dates
| Filing date | May 23, 2017 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Sep 16, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A chemical mechanical polishing (CMP) method includes preparing a polishing pad, determining a first load to be applied to a conditioning disk during conditioning of the polishing pad and a first indentation depth at which tips of the conditioning disk are inserted into the polishing pad when the first load is applied to the conditioning disk, preparing a conditioning disk, and positioning the conditioning disk on the polishing pad and conditioning a surface of the polishing pad by using the conditioning disk while applying the first load to the conditioning disk.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.