Methods for controlling the substrate temperature using a plurality of flushing gases

US10526705B2 · kind B2 · utility

Assignee

• AIXTRON SE · DE

Inventors

• Adam Boyd · Kelmis, BE
• Daniel Claessens · Aachen, DE
• Hugo Silva · Lisbon, PT

Key dates

• Filing date: Apr 3, 2018
• Grant date: Jan 7, 2020
• Expiry date: Apr 10, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/68771
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a CVD reactor, flushing gases of different heat conductivities are used to flush a gap between a substrate holder and a heating system. The lower side of the substrate holder is configured differently in a central region with respect to the heat transmission from the heating system to the substrate holder, than in a circumferential region that surrounds the central region. The gap has such a gap height that, upon a change of a first flushing gas with a first heat conductivity to a second flushing gas with a second heat conductivity, the heat supplied from the heating system to the substrate holder changes differently in the circumferential region than in the central region.