Method for manufacturing a semiconductor device and a coating material
US10529552B2 · kind B2 · utility
1Cited by
14References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2018 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Feb 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a semiconductor device, an underlying structure is formed. A surface grafting layer is formed on the underlying structure. A photo resist layer is formed on the surface grafting layer. The surface grafting layer includes a coating material including a backbone polymer, a surface grafting unit coupled to the backbone polymer and an adhesion unit coupled to the backbone polymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.