Patent · US Active

Semiconductor device

US10529644B2 · kind B2 · utility

0Cited by

5References

15Claims

0Family size

Assignee

Nexperia B.V. · NL

Inventors

Shun Tik Yeung · Kwai Chung, CN
Pompeo V. Umali · Kwai Chung, CN
Hans-Juergen Funke · Stade, DE
Chi Ho Leung · Kowloon, CN
Wolfgang Schnitt · Hamburg, DE
Zhihao Pan · Hamburg, DE

Key dates

Filing date	Feb 22, 2016
Grant date	Jan 7, 2020
Priority date	—
Expiry date	Feb 22, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/8585
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and a method of making the same. The device includes an electrically conductive heat sink having a first surface. The device also includes a semiconductor substrate. The device further includes a first contact located on a first surface of the substrate. The device also includes a second contact located on a second surface of the substrate. The first surface of the substrate is mounted on the first surface of the heat sink for electrical and thermal conduction between the heat sink and the substrate via the first contact. The second surface of the substrate is mountable on a surface of a carrier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.