Auxiliary gate antenna diodes

US10529704B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Salvatore Cimino · Cohoes, US
• David Pritchard · Beacon, US
• Lixia Lei · Clifton Park, US
• Heng Yang · Fishkill, US
• Manjunatha Prabhu · Malta, US

Key dates

• Filing date: Oct 1, 2018
• Grant date: Jan 7, 2020
• Expiry date: Oct 1, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

One illustrative embodiment disclosed herein relates to a semiconductor device that includes, among other things, a semiconductor substrate including a base semiconductor layer, an active semiconductor layer, and a buried insulating layer positioned between the base semiconductor layer and the active semiconductor layer. The device further includes a set of functional gate structures including at least one functional gate structure formed above the active semiconductor layer, a first source/drain region positioned in the active semiconductor layer adjacent a first functional gate structure in the set, a first auxiliary gate structure positioned adjacent the first source/drain region, and a discharge device coupled to the base semiconductor layer and the first auxiliary gate structure.