Semiconductor device and method for fabricating the same

US10529824B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Yao-De Chiou · Houliao, TW
• Hui-Chi Chen · Dashulong, TW
• Jeng-Ya David Yeh · New Taipei, TW

Key dates

• Filing date: Jul 30, 2018
• Grant date: Jan 7, 2020
• Expiry date: Jul 30, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0158

Abstract

A semiconductor device includes a first field effect transistor (FET) including a first gate dielectric layer and a first gate electrode. The first gate electrode includes a first lower metal layer and a first upper metal layer. The first lower metal layer includes a first underlying metal layer in contact with the first gate dielectric layer and a first bulk metal layer. A bottom of the first upper metal layer is in contact with an upper surface of the first underlying metal layer and an upper surface of the first bulk metal layer.