Semiconductor device and manufacturing method thereof
US10529825B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 11, 2018 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Apr 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a gate structure, a source/drain region, a source/drain contact structure, a first dielectric layer, a first spacer, and a first connection structure. The gate structure is disposed on the semiconductor substrate. The source/drain region is disposed in the semiconductor substrate and disposed at a side of the gate structure. The source/drain contact structure is disposed on the source/drain region. The first dielectric layer is disposed on the source/drain contact structure and the gate structure. The first spacer is disposed in a first contact hole penetrating the first dielectric layer on the source/drain contact structure. The first connection structure is disposed in the first contact hole. The first connection structure is surrounded by the first spacer in the first contact hole, and the first connection structure is connected with the source/drain contact structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.