Shallow, abrupt and highly activated tin extension implant junction
US10529832B2 · kind B2 · utility
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4References
13Claims
0Family size
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Key dates
| Filing date | Dec 19, 2016 |
| Grant date | Jan 7, 2020 |
| Priority date | — |
| Expiry date | Dec 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments are directed to a method of forming a semiconductor device and resulting structures having a shallow, abrupt and highly activated tin (Sn) extension implant junction. The method includes forming a semiconductor fin on a substrate. A gate is formed over a channel region of the semiconductor fin. A Sn extension implant junction is formed on a surface of the semiconductor fin in the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.