Patent · US Active

Pulsed level shift and inverter circuits for GaN devices

US10530169B2 · kind B2 · utility

9Cited by

58References

6Claims

0Family size

Assignee

Navitas Semiconductor Limited · IE

Inventors

Daniel M. Kinzer · El Segundo, US
Santosh Sharma · South Burlington, US
Ju Zhang · Monterey Park, US

Key dates

Filing date	Oct 4, 2018
Grant date	Jan 7, 2020
Priority date	—
Expiry date	Oct 4, 2038

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02B70/10
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.