Santosh Sharma
92Patents
16h-index
76Co-inventors
83Inventor score
Filing activity: Aug 26, 2009 → Jun 25, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9324846B1 | Field plate in heterojunction bipolar transistor with improved break-down voltage | Electricity | 490 | Active |
| US9777748B2 | System and method of detecting cavitation in pumps | Mechanical Engineering; Lighting; Heating | 155 | Active |
| US9571093B2 | Half bridge driver circuits | Emerging Cross-Sectional Technologies | 34 | Active |
| US9401612B2 | Pulsed level shift and inverter circuits for GaN devices | Emerging Cross-Sectional Technologies | 31 | Active |
| US9722609B2 | Integrated level shifter | Emerging Cross-Sectional Technologies | 30 | Active |
| US9929652B1 | GaN FET with integrated driver and slew rate control | Emerging Cross-Sectional Technologies | 29 | Active |
| US9685869B1 | Half bridge power conversion circuits using GaN devices | Emerging Cross-Sectional Technologies | 28 | Active |
| US9570927B2 | Integrated level shifter | Emerging Cross-Sectional Technologies | 26 | Active |
| US9537338B2 | Level shift and inverter circuits for GaN devices | Emerging Cross-Sectional Technologies | 25 | Active |
| US9831867B1 | Half bridge driver circuits | Electricity | 25 | Active |
| US9716395B2 | GaN circuit drivers for GaN circuit loads | Emerging Cross-Sectional Technologies | 24 | Active |
| US9859732B2 | Half bridge power conversion circuits using GaN devices | Emerging Cross-Sectional Technologies | 22 | Active |
| US9960620B2 | Bootstrap capacitor charging circuit for GaN devices | Emerging Cross-Sectional Technologies | 21 | Active |
| US10135275B2 | Pulsed level shift and inverter circuits for GaN devices | Emerging Cross-Sectional Technologies | 20 | Active |
| US9960764B2 | Half bridge driver circuits | Emerging Cross-Sectional Technologies | 20 | Active |
| US10170922B1 | GaN circuit drivers for GaN circuit loads | Emerging Cross-Sectional Technologies | 19 | Active |
| US9224858B1 | Lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) with a below source isolation region and a method of forming the LDMOSFET | Electricity | 13 | Active |
| US10333327B2 | Bootstrap capacitor charging circuit for GaN devices | Emerging Cross-Sectional Technologies | 12 | Active |
| US10277048B2 | Half bridge power conversion circuits using GaN devices | Emerging Cross-Sectional Technologies | 12 | Active |
| US10897142B2 | Half bridge circuit with bootstrap capacitor charging circuit | Emerging Cross-Sectional Technologies | 10 | Active |
| US10396579B2 | GaN circuit drivers for GaN circuit loads | Emerging Cross-Sectional Technologies | 10 | Active |
| US10530169B2 | Pulsed level shift and inverter circuits for GaN devices | Emerging Cross-Sectional Technologies | 9 | Active |
| US10536140B1 | Half bridge and oscillator power integrated circuit | Electricity | 9 | Active |
| US10601302B1 | Bootstrap power supply circuit | Emerging Cross-Sectional Technologies | 9 | Active |
| US10944270B1 | GaN circuit drivers for GaN circuit loads | Emerging Cross-Sectional Technologies | 8 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.