Method of sealing open pores on surface of porous dielectric material using iCVD process
US10535514B2 · kind B2 · utility
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Key dates
| Filing date | Aug 25, 2016 |
| Grant date | Jan 14, 2020 |
| Priority date | — |
| Expiry date | Aug 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76829
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are methods of sealing open pores of a surface of a porous dielectric material using an initiated chemical vapor deposition (iCVD) process. In one example method of sealing open pores, since the polymer thin film having a significantly thin thickness may be formed by a solvent-free vapor deposition method without plasma treatment, it is possible to minimize deterioration of characteristics of the dielectric material vulnerable to plasma and a chemical solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.