Patent · US Active

Semiconductor devices, and a method for forming a semiconductor device

US10535578B2 · kind B2 · utility

0Cited by

3References

19Claims

0Family size

Assignee

Intel IP Corporation · US

Inventors

Reinhard Mahnkopf · Oberhaching, DE
Andreas Wolter · Regensburg, DE
Sonja Koller · Regensburg, DE

Key dates

Filing date	Sep 29, 2017
Grant date	Jan 14, 2020
Priority date	—
Expiry date	Sep 29, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/01
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a plurality of circuit regions formed at a circuit semiconductor layer of a semiconductor die. The semiconductor device includes an etch stop layer of the semiconductor die arranged between the circuit semiconductor layer of the semiconductor die and a handling layer of the semiconductor die. The semiconductor device includes one or more trench structures extending through the handling layer of the semiconductor die. The one or more trench structures extends to at least the etch stop layer and to at most the circuit semiconductor layer of the semiconductor die.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.