Patent · US Active

Semiconductor device including an epitaxial layer wrapping around the nanowires

US10535780B2 · kind B2 · utility

4Cited by

4References

20Claims

0Family size

Assignee

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

Mark van Dal · Linden, BE
Gerben Doornbos · Kessel-Lo, BE

Key dates

Filing date	May 8, 2017
Grant date	Jan 14, 2020
Priority date	—
Expiry date	May 8, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A multi-stack nanowire device includes a plurality of fins. Each of the fins has a multi-layer stack comprising a first nanowire and a second nanowire. A first portion of the first nanowire and second nanowire are doped to form source and drain regions. A second portion of the first nanowire and second nanowire is channel regions between the source and drain regions. An epitaxial layer wraps around the second portion of first nanowire and second nanowire. A gate is disposed over the second portion of the first nanowire and second nanowire. The epitaxial layer is interposed in between the first nanowire and the second nanowire over the channel region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.