Driver for switching gallium nitride (GaN) devices
US10536070B1 · kind B1 · utility
3Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2018 |
| Grant date | Jan 14, 2020 |
| Priority date | — |
| Expiry date | Aug 1, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A device for switching Gallium Nitride (GaN) devices includes a high side driver, low side driver, and high side charge circuitry. The high side driver is adapted to control a high side GaN device using a high side supply. The low side driver is adapted to control a low side GaN device using a low side supply. The high side charge circuitry is adapted to charge the high side supply with the low side supply when the low side driver activates the low side GaN device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.