Substrate dielectric crack prevention using interleaved metal plane

US10537019B1 · kind B1 · utility

Assignee

• NXP USA, Inc. · US

Inventors

• Tingdong Zhou · Austin, US
• Twila J. Eichman · San Marcos, US
• Stanley Andrew Cejka · Cedar Park, US
• James S. Golab · Austin, US
• Chee Seng Foong · Bandar Baru Sungai Buloh, MY

Key dates

• Filing date: Jun 27, 2019
• Grant date: Jan 14, 2020
• Expiry date: Jun 27, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H05K2201/093
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of a substrate are provided herein, which include: a first metal plane and a second metal plane in a first metal layer, the first and second metal planes laterally separated by a first gap of dielectric material; and a third metal plane and a fourth metal plane in a second metal layer vertically adjacent to the first metal layer, the third and fourth metal planes laterally separated by a second gap of dielectric material, wherein the second gap comprises a first laterally-shifted gap portion and a second laterally-shifted gap portion, the first laterally-shifted gap portion is laterally offset from a vertical footprint of the first gap in a first lateral direction, and the second laterally-shifted gap portion is laterally offset from the vertical footprint of the first gap in a second lateral direction opposite the first lateral direction.