Patent · US Active

DDR memory bus with a reduced data strobe signal preamble timespan

US10541018B2 · kind B2 · utility

1Cited by
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20Claims
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Key dates

Filing dateSep 26, 2017
Grant dateJan 21, 2020
Priority date
Expiry dateOct 7, 2037

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/4093
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A method is described. The method includes configuring first register space to establish ODT values of a data strobe signal trace of a DDR data bus. The method also includes configuring second register space to establish ODT values of a data signal trace of the DDR data bus. The ODT values for the data strobe signal trace are different than the ODT values for the data signal trace. The ODT values for the data strobe signal do not change when consecutive write operations of the DDR bus write to different ranks of a same DIMM.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.