Material layers, semiconductor devices including the same, and methods of fabricating material layers and semiconductor devices
US10541127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2016 |
| Grant date | Jan 21, 2020 |
| Priority date | — |
| Expiry date | Oct 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A material layer, a semiconductor device including the material layer, and methods of forming the material layer and the semiconductor device are provided herein. A method of forming a SiOCN material layer may include supplying a silicon source onto a substrate, supplying a carbon source onto the substrate, supplying an oxygen source onto the substrate, supplying a nitrogen source onto the substrate, and supplying hydrogen onto the substrate. When a material layer is formed according to a method of the present inventive concepts, a material layer having a high tolerance to wet etching and/or good electric characteristics may be formed, and may even be formed when the method is performed at a low temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.