Forming semiconductor structures with two-dimensional materials
US10541132B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jun 11, 2018 |
| Grant date | Jan 21, 2020 |
| Priority date | — |
| Expiry date | Jun 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/82
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The current disclosure describes semiconductor devices, e.g., transistors, include a substrate, a semiconductor region including, at the surface, MoS2 and/or other monolayer material over the substrate, and a terminal structure at least partially over the semiconductor region, which includes a different monolayer material grown directly over the semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.