Self-aligned build-up of topographic features
US10541143B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2016 |
| Grant date | Jan 21, 2020 |
| Priority date | — |
| Expiry date | Mar 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and architectures for self-aligned build-up of patterned features. An initial patterned feature aspect ratio may be maintained or increased, for example to mitigate erosion of the feature during one or more subtractive device fabrication processes. A patterned feature height may be increased without altering an effective spacing between adjacent features that may be further relied upon, for example to further pattern an underlying material. A patterned feature may be conformally capped with a material, such as a metal or dielectric, in a self-aligned manner, for example to form a functional device layer on an initial pattern having a suitable space width-to-line height aspect ratio without the use of a masked etch to define the cap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.