Patent · US Active

Three-dimensional magnetic memory devices

US10541268B2 · kind B2 · utility

1Cited by
19References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 28, 2017
Grant dateJan 21, 2020
Priority date
Expiry dateDec 28, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N50/01

Abstract

A magnetic memory device is provided. The magnetic memory device includes: (i) a cylindrical core, (ii) a first cylindrical ferromagnetic layer that surrounds the cylindrical core, (iii) a spacer layer that surrounds the first cylindrical ferromagnetic layer, and (iv) a second cylindrical ferromagnetic layer that surrounds the spacer layer. The cylindrical core, the first cylindrical ferromagnetic layer, the spacer layer, and the second cylindrical ferromagnetic layer collectively form a magnetic tunnel junction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.