Methods of forming inverted multijunction solar cells with distributed Bragg reflector
US10541349B1 · kind B1 · utility
3Cited by
51References
20Claims
0Family size
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Key dates
| Filing date | Apr 29, 2013 |
| Grant date | Jan 21, 2020 |
| Priority date | — |
| Expiry date | Aug 25, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of manufacturing an inverted metamorphic multijunction solar cell is disclosed herein. The method includes forming a lattice constant transition material positioned between a first subcell and a second subcell using a metal organic chemical vapor deposition (MOCVD) reactor. The solar cell further includes at least one distributed Bragg reflector (DBR) layer directly adjacent a back surface field (BSF) layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.