Arthur Cornfeld
42Patents
11h-index
14Co-inventors
68Inventor score
Filing activity: Jun 2, 2006 → Aug 17, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7727795B2 | Exponentially doped layers in inverted metamorphic multijunction solar cells | Emerging Cross-Sectional Technologies | 67 | Active |
| US7785989B2 | Growth substrates for inverted metamorphic multijunction solar cells | Emerging Cross-Sectional Technologies | 58 | Active |
| US7741146B2 | Demounting of inverted metamorphic multijunction solar cells | Emerging Cross-Sectional Technologies | 51 | Active |
| US8236600B2 | Joining method for preparing an inverted metamorphic multijunction solar cell | Emerging Cross-Sectional Technologies | 38 | Active |
| US7960201B2 | String interconnection and fabrication of inverted metamorphic multijunction solar cells | Emerging Cross-Sectional Technologies | 37 | Active |
| US9018521B1 | Inverted metamorphic multijunction solar cell with DBR layer adjacent to the top subcell | Emerging Cross-Sectional Technologies | 25 | Active |
| US8039291B2 | Demounting of inverted metamorphic multijunction solar cells | Emerging Cross-Sectional Technologies | 22 | Active |
| US8753918B2 | Gallium arsenide solar cell with germanium/palladium contact | Emerging Cross-Sectional Technologies | 15 | Active |
| US8263856B2 | Inverted metamorphic multijunction solar cells with back contacts | Emerging Cross-Sectional Technologies | 12 | Active |
| US8987042B2 | Ohmic N-contact formed at low temperature in inverted metamorphic multijunction solar cells | Electricity | 11 | Active |
| US9287438B1 | Method for forming ohmic N-contacts at low temperature in inverted metamorphic multijunction solar cells with contaminant isolation | Emerging Cross-Sectional Technologies | 11 | Active |
| US8536445B2 | Inverted metamorphic multijunction solar cells | Emerging Cross-Sectional Technologies | 9 | Active |
| US9018519B1 | Inverted metamorphic multijunction solar cells having a permanent supporting substrate | Emerging Cross-Sectional Technologies | 6 | Active |
| US9117966B2 | Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell | Emerging Cross-Sectional Technologies | 4 | Active |
| US8778199B2 | Epitaxial lift off in inverted metamorphic multijunction solar cells | Emerging Cross-Sectional Technologies | 4 | Active |
| US8513518B2 | Terrestrial solar power system using III-V semiconductor solar cells | Emerging Cross-Sectional Technologies | 4 | Active |
| US10541349B1 | Methods of forming inverted multijunction solar cells with distributed Bragg reflector | Emerging Cross-Sectional Technologies | 3 | Active |
| US9231147B2 | Heterojunction subcells in inverted metamorphic multijunction solar cells | Emerging Cross-Sectional Technologies | 2 | Active |
| US8686282B2 | Solar power system for space vehicles or satellites using inverted metamorphic multijunction solar cells | Emerging Cross-Sectional Technologies | 2 | Active |
| US8536446B2 | Inverted metamorphic multijunction solar cells | Emerging Cross-Sectional Technologies | 1 | Active |
| US8895342B2 | Heterojunction subcells in inverted metamorphic multijunction solar cells | Emerging Cross-Sectional Technologies | 1 | Active |
| US10211361B1 | Method of polyimide diffusion bonding for multijunction solar cells | Emerging Cross-Sectional Technologies | 1 | Active |
| US11424381B2 | Inverted metamorphic multijunction solar cells having a permanent supporting substrate | Emerging Cross-Sectional Technologies | 0 | Active |
| US11063168B1 | Inverted multijunction solar cells with distributed bragg reflector | Emerging Cross-Sectional Technologies | 0 | Active |
| US10374112B2 | Inverted metamorphic multijunction solar cell including a metamorphic layer | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.