Method of forming a silicon nitride film using Si—N containing precursors

US10544506B2 · kind B2 · utility

Assignee

• L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

• Sean Kerrigan · Champaign, US
• Antonio Sanchez · Tsukuba, JP

Key dates

• Filing date: Mar 30, 2016
• Grant date: Jan 28, 2020
• Expiry date: Apr 10, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Methods for forming a SiN-containing film are disclosed. The methods use film-forming compositions comprising Si—N containing precursors. Also disclosed are methods of synthesizing the same and methods of using the same for vapor deposition. In particular, a catalytic dehydrogenative coupling of carbosilanes with ammonia, amines and amidines produces the Si—N containing precursors.