Selective growth method
US10546741B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2018 |
| Grant date | Jan 28, 2020 |
| Priority date | — |
| Expiry date | Mar 20, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A selective growth method of selectively growing a thin film on an underlayer, on which an insulating film and a conductive film are exposed, includes: preparing a workpiece having the underlayer on which the insulating film and the conductive film are exposed; and selectively growing a silicon-based insulating film on the insulating film by repeating a plurality of times a first step of adsorbing an aminosilane-based gas onto the insulating film and the conductive film and a second step of supplying a reaction gas for reacting with the adsorbed aminosilane-based gas to form the silicon-based insulating film, wherein the conductive film is vaporized by reaction with the reaction gas so that the conductive film is reduced in thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.