Managed substrate effects for stabilized SOI FETs

US10546747B2 · kind B2 · utility

Assignee

• pSemi Corporation · US

Inventors

• Robert Mark Englekirk · Littleton, US
• Keith Bargroff · San Diego, US
• Christopher C. Murphy · Lake Zurich, US
• Tero Tapio Ranta · San Diego, US
• Simon Edward Willard · Irvine, US

Key dates

• Filing date: Oct 22, 2018
• Grant date: Jan 28, 2020
• Expiry date: Oct 22, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Modified silicon-on-insulator (SOI) substrates having a trap rich layer, and methods for making such modifications. The modified regions eliminate or manage accumulated charge that would otherwise arise because of the interaction of the underlying trap rich layer and active layer devices undergoing transient changes of state, thereby eliminating or mitigating the effects of such accumulated charge on non-RF integrated circuitry fabricated on such substrates. Embodiments retain the beneficial characteristics of SOI substrates with a trap rich layer for RF circuitry requiring high linearity, such as RF switches, while avoiding the problems of a trap rich layer for circuitry that is sensitive to accumulated charge effects caused by the presence of the trap rich layer, such as non-RF analog circuitry and amplifiers (including power amplifiers and low noise amplifiers).