Patent · US Active

Method for manufacturing a resistive random access memory; having reduced variability of electrical characteristics

US10547002B2 · kind B2 · utility

0Cited by

1References

7Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Gabriele Navarro · Moirans, FR
Christelle Charpin-Nicolle · Grenoble, FR

Key dates

Filing date	Apr 7, 2017
Grant date	Jan 28, 2020
Priority date	—
Expiry date	Oct 18, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/8833
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method for manufacturing resistive random access memories, each resistive random access memory including first and second electrodes separated by a layer of active material, the method including producing connector elements with a step Cp along a first direction, each connector element having a width Cb along the first direction; producing a plurality of first electrodes with a step Ep along the first direction, each first electrode having a first end surface and a second end surface, the second end surface having a width Eb along the first direction and an area greater than the area of the first end surface; wherein:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.