Inventor · Moirans, FR

Gabriele Navarro

18Patents
2h-index
23Co-inventors
46Inventor score

Filing activity: Oct 15, 2015 → Apr 21, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US10056266B2 Method for manufacturing a resistive device for a memory or logic circuit Electricity 3 Active
US10529515B2 Switch including a phase change materials based structure where only one part is activatable Electricity 2 Active
US11355702B2 Memory device Electricity 2 Active
US10910558B2 Memory device Electricity 2 Active
US11653579B2 Phase-change memory cell Physics 1 Active
US9934922B2 Commutator structure comprising several channels of phase change material and interdigitated control electrodes Electricity 1 Active
US10854673B2 Elementary cell comprising a resistive random-access memory and a selector, stage and matrix of stages comprising a plurality of said cells and associated manufacturing method Electricity 1 Active
US10547002B2 Method for manufacturing a resistive random access memory; having reduced variability of electrical characteristics Electricity 0 Active
US11101430B2 Storage element Electricity 0 Active
US12010934B2 Selection element with a plurality of amorphous layers Electricity 0 Active
US10755754B2 Analog method for programming a phase change memory cell by means of identical electrical pulses Physics 0 Active
US11711927B2 Filamentary type non-volatile memory device Electricity 0 Active
US11800820B2 Method for programming a phase change memory Physics 0 Active
US11641786B2 Memory device Electricity 0 Active
US11707001B2 Phase-change resistive memory Electricity 0 Active
US12114580B2 Phase-change memory cell Physics 0 Active
US9941471B2 Method of manufacturing a PCRAM memory Electricity 0 Active
US11923006B2 Selective non-volatile memory device and associated reading method Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.