Reflection mode photomask and fabrication method therefore
US10553428B2 · kind B2 · utility
3Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2017 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Aug 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a mask blank includes depositing a reflective multilayer over a substrate, depositing a capping layer over the reflective multilayer, depositing an absorber layer over the capping layer, and depositing an anti-reflective coating (ARC) layer over the absorber layer. The ARC layer is a single material film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.