Chun-Lang Chen
48Patents
4h-index
24Co-inventors
63Inventor score
Filing activity: Jun 4, 1993 → Jul 21, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8715890B2 | Semiconductor mask blanks with a compatible stop layer | Electricity | 84 | Active |
| US5983747A | Auxiliary handlebar of bicycle | Emerging Cross-Sectional Technologies | 23 | Expired |
| US8882304B2 | Illuminating device and packaging method thereof | Electricity | 6 | Active |
| US7043327B2 | Lithography apparatus and method employing non-environmental variable correction | Physics | 5 | Expired |
| US9373551B2 | Moveable and adjustable gas injectors for an etching chamber | Electricity | 3 | Active |
| US9953833B2 | Semiconductor mask blanks with a compatible stop layer | Electricity | 3 | Active |
| US10553428B2 | Reflection mode photomask and fabrication method therefore | Electricity | 3 | Active |
| US10276426B2 | System and method for performing spin dry etching | Electricity | 3 | Active |
| US10845698B2 | Mask, method of forming the same and method of manufacturing a semiconductor device using the same | Electricity | 2 | Active |
| US9921467B2 | Mask blank and mask and fabrication method thereof | Electricity | 2 | Active |
| US10095102B2 | Photomask having a plurality of shielding layers | Physics | 2 | Active |
| US11270884B2 | Reflection mode photomask | Electricity | 2 | Active |
| USD348203S | Automobile steering lock | General | 2 | Expired |
| US8563351B2 | Method for manufacturing photovoltaic device | Emerging Cross-Sectional Technologies | 2 | Active |
| US9122175B2 | Image mask film scheme and method | Physics | 1 | Active |
| US8999611B2 | Mask blank for scattering effect reduction | Physics | 1 | Active |
| US9829786B2 | PSM blank for enhancing small size CD resolution | Physics | 1 | Active |
| US11662656B2 | Mask and method of forming the same | Electricity | 1 | Active |
| US10698313B2 | Apparatus and method for developing a photoresist coated substrate | Physics | 1 | Active |
| US9142423B2 | Semiconductor mask blanks with a compatible stop layer | Electricity | 1 | Active |
| US10007176B2 | Graphene pellicle for extreme ultraviolet lithography | Chemistry; Metallurgy | 1 | Active |
| US11735421B2 | Reflection mode photomask and method of making | Electricity | 1 | Active |
| US8981557B2 | Method for forming photovoltaic cell, and resulting photovoltaic cell | Emerging Cross-Sectional Technologies | 1 | Active |
| US9581894B2 | Image mask film scheme and method | Physics | 1 | Active |
| US7368229B2 | Composite layer method for minimizing PED effect | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.