Methods of forming a silicon layer, methods of forming patterns, and methods of manufacturing semiconductor devices using the same
US10553449B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Sep 11, 2017 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Feb 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a pattern includes forming an etch target layer on a substrate, forming sacrificial patterns on the etch target layer, the sacrificial patterns including a carbon-containing material, providing a silicon-sulfur compound or a sulfur-containing gas onto the sacrificial patterns to form a seed layer, providing a silicon precursor onto the seed layer to form silicon-containing mask patterns, and at least partially etching the etch target layer using the mask patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.