Badro Im
5Patents
3h-index
25Co-inventors
46Inventor score
Filing activity: Feb 7, 2014 → Sep 11, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9305928B2 | Semiconductor devices having a silicon-germanium channel layer and methods of forming the same | Electricity | 9 | Active |
| US10141200B2 | Methods of manufacturing semiconductor devices | Electricity | 7 | Active |
| US10224213B2 | Method for forming patterns of a semiconductor device | Electricity | 4 | Active |
| US10553449B2 | Methods of forming a silicon layer, methods of forming patterns, and methods of manufacturing semiconductor devices using the same | Electricity | 0 | Active |
| US9666433B2 | Methods for manufacturing a semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.