Methods and devices for enhancing mobility of charge carriers
US10553497B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2016 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Sep 26, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/792
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and devices for enhancing mobility of charge carriers. An integrated circuit may include semiconductor devices of two types. The first type of device may include a metallic gate and a channel strained in a first manner. The second type of device may include a metallic gate and a channel strained in a second manner. The gates may include, collectively, three or fewer metallic materials. The gates may share a same metallic material. A method of forming the semiconductor devices on an integrated circuit may include depositing first and second metallic layers in first and second regions of the integrated circuit corresponding to the first and second gates, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.