Semiconductor device having conductive feature overlapping an edge of an active region
US10553687B2 · kind B2 · utility
1Cited by
2References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 11, 2013 |
| Grant date | Feb 4, 2020 |
| Priority date | — |
| Expiry date | Jul 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device includes a substrate having an active region, a drain region in the active region, a source region in the active region, a gate structure, and a conductive field plate. The gate structure extends in a first direction over the active region. The gate structure is arranged between the drain region and the source region in a second direction transverse to the first direction. The conductive field plate extends in the second direction over an edge of the active region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.