Magnetic recording assisted by a single spin hall effect (SHE) layer in the write gap
US10559318B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2019 |
| Grant date | Feb 11, 2020 |
| Priority date | — |
| Expiry date | Mar 29, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/0024
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a SHE layer comprising a giant Spin Hall Angle material is formed between a main pole (MP) trailing side and trailing shield (TS) bottom surface. The SHE layer may contact one or both of the MP and TS, has a front side at the air bearing surface (ABS) or recessed therefrom, and a backside up to 80 nm from the ABS. Current (ISHE) is applied in a cross-track direction and synchronized with the write current. Depending on SHE layer placement, a transverse spin transfer torque is applied to one or both of a local MP magnetization at the MP trailing side and a local TS magnetization at the TS bottom surface thereby tilting the former to a direction that enhances the MP write field and tilting the latter to a direction that increases the TS return field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.