Headway Technologies, Inc.
🏢 View company profile →1,215Patents
850Active
1,215Granted
61Portfolio score
Filing activity: Mar 27, 1996 → Jun 10, 2024 · 319 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7863095B2 | Method of manufacturing layered chip package | Electricity | 226 | Active |
| US9230571B1 | MgO based perpendicular spin polarizer in microwave assisted magnetic recording (MAMR) applications | Physics | 165 | Active |
| US8582240B1 | Magnetic recording assisted by spin torque oscillator with a radio frequency current bias | Physics | 153 | Active |
| US7449345B2 | Capping structure for enhancing dR/R of the MTJ device | Electricity | 133 | Expired |
| US7045368B2 | MRAM cell structure and method of fabrication | Electricity | 117 | Expired |
| US6773515B2 | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures | Emerging Cross-Sectional Technologies | 111 | Expired |
| US10325618B1 | Perpendicular magnetic recording (PMR) writer with one or more spin flipping elements in the gap | Physics | 109 | Active |
| US7262941B2 | FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures | Emerging Cross-Sectional Technologies | 104 | Expired |
| US7476919B2 | MRAM cell structure and method of fabrication | Electricity | 98 | Active |
| US7335960B2 | MRAM cell with flat topography and controlled bit line to free layer distance and method of manufacture | Electricity | 97 | Expired |
| US6292336A | Giant magnetoresistive (GMR) sensor element with enhanced magnetoresistive (MR) coefficient | Physics | 96 | Expired |
| US8852760B2 | Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer | Emerging Cross-Sectional Technologies | 94 | Active |
| US6466418B1 | Bottom spin valves with continuous spacer exchange (or hard) bias | Emerging Cross-Sectional Technologies | 90 | Expired |
| US8456883B1 | Method of spin torque MRAM process integration | Electricity | 87 | Active |
| US9361912B1 | High moment side shield design for area density improvement of perpendicular magnetic recording (PMR) writer | Physics | 84 | Active |
| US8823118B2 | Spin torque transfer magnetic tunnel junction fabricated with a composite tunneling barrier layer | Electricity | 82 | Active |
| US9466319B1 | Perpendicular magnetic recording (PMR) write shield design with minimized wide adjacent track erasure (WATE) | Physics | 80 | Active |
| US8860156B2 | Minimal thickness synthetic antiferromagnetic (SAF) structure with perpendicular magnetic anisotropy for STT-MRAM | Electricity | 78 | Active |
| US8264792B2 | PMR writer device with multi-level tapered write pole | Emerging Cross-Sectional Technologies | 76 | Active |
| US8722543B2 | Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices | Emerging Cross-Sectional Technologies | 75 | Active |
| US7698941B2 | Sensing unit and method of making same | Emerging Cross-Sectional Technologies | 72 | Active |
| US6998150B2 | Method of adjusting CoFe free layer magnetostriction | Emerging Cross-Sectional Technologies | 72 | Expired |
| US7602033B2 | Low resistance tunneling magnetoresistive sensor with composite inner pinned layer | Electricity | 71 | Active |
| US8203389B1 | Field tunable spin torque oscillator for RF signal generation | Electricity | 71 | Active |
| US7628071B2 | Sensing unit and method of making same | Emerging Cross-Sectional Technologies | 71 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.